Observations of Current Blocking in InP/GaAsSb DHBTs
نویسندگان
چکیده
Type II InP/GaAsSb transistors have attracted much interest in high speed microelectronics. However, Kirk-effectinduced current blocking was observed, limiting the highest achievable current density and hence the speed. In this work, we present an explanation as to the cause of current blocking in InP/GaAsSb DHBTs. The effects of collector thickness are investigated and methods to achieve higher current densities are proposed.
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تاریخ انتشار 2004